s mhop microelectronics c orp. a SP3903 symbol v ds v gs i dm w a p d c 2.5 -55 to 150 i d units parameter 30 7.5 31 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v 7.5a 32 @ vgs=4.5v 22 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw jul,18,2013 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w r jc thermal resistance, junction-to-case a c/w 6 6 1.6 green product s1 g1 s2 g2 d1 d1 d2 d2 pin1 pdfn 5x6 dual n-channel enhancement mode field effect transistor ver 1.4 49 e single pulse avalanche energy d mj as t c =25 c a 21.5 t c =100 c a 13.6 a e e t c =25 c w 20.8 t c =100 c w 8.3 a r ja thermal resistance, junction-to-ambient c/w 50
symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) 1.4 v 16 g fs 13 s v sd c iss 360 pf c oss 90 pf c rss 70 pf q g 10 nc 12.6 nc q gs 17 nc q gd 8.3 t d(on) 7 ns t r 1 ns t d(off) ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =15v,i d =3.75a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =3.75a v ds =5v , i d =3.75a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 2.3 v gs =4.5v , i d =3.1a 23 m ohm c f=1.0mhz c v ds =15v,i d =3.75a, v gs =4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a 0.8 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) e.drain current limited by maximum junction temperature. _ _ SP3903 www.samhop.com.tw jul,18,2013 2 nc v ds =15v,i d =3.75a,v gs =4.5v 4 _ 1.7 22 32 2.3 ver 1.4
SP3903 ver 1.4 www.samhop.com.tw jul,18,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 30 24 18 12 0 0 0.5 1.0 1.5 2.0 2.5 3.0 12.0 9.6 7.2 4.8 2.4 0 0 0.8 4.8 4.0 3.2 2.4 1.6 -55 c 60 50 40 30 20 10 1 1.6 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 6 v gs =3.5v v gs =10v v gs =4.5v 1.5 v gs =4.5v i d =3.1a v gs =10v i d =3.75a v gs =4v v gs =10v 30 24 18 12 6 1 v ds =v gs i d =250ua v gs =4.5v v gs =5v 25 c tj=125 c v gs =3v
SP3903 ver 1.4 www.samhop.com.tw jul,18,2013 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 60 50 40 30 20 10 0 246 8 10 0 10 1 00.25 20 1.25 0.50 0.75 1.00 600 500 400 300 200 100 0 10 15 20 25 30 10 8 6 4 2 0 0 3.0 6.0 1.5 4.5 7.5 9.0 125 c 75 c i d =3.75a ciss coss crss 1 10 100 1 10 100 60 6 0 5 tr vds=15v,id=1a vgs=10v tf v ds =50v i d =3.75a 25 c 125 c 0.1 1 10 10 1 r d s (on ) limit 0.1 v gs =10v single pulse t a =25 c 1 0 0 u s 1ms 10 ms 100ms d c td(off ) td(on) 75 c 25 c
SP3903 www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 0.001 0.01 0.1 1 single pulse 0.00001 1000 100 10 1 0.1 0.01 0.001 0.0001 p dm 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datas heet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th t 1 t 2 0.5 0.2 0.1 0.05 0.02 0.01 ver 1.4 jul,18,2013
SP3903 www.samhop.com.tw jul,18,2013 6 package outline dimensions ver 1.4 top view pdfn 5x6-8l bottom view side view symbols millimeters a a1 b c d e e1 min max 0.80 1.00 0.00 0.05 0.30 0.50 0.15 0.25 e l l1 3.82 bsc 0.45 0.00 0 o nom 0.90 0.40 0.20 1.27 bsc 0.15 0 10 o 5.20 bsc 0.50 0.60 0.75 e e1 l1 d e e2 d1 d2 l2 l b a a1 c d2 e2 l2 4.35 bsc 5.55 bsc 6.05 bsc 0.55 0.65 d1 0.68 ref
SP3903 www.samhop.com.tw jul,18,2013 7 top marking definition pdfn 5x6-8l 3903 xxxxxx y: cu wire + halogen free. rohs compliant. g: halogen free. rohs compliant. product no. samhop logo pin 1 lot number production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b.....) production year (2009 = 9, 2010 = a.....) ver 1.4
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